Cellulose‐Derivative‐Based Gate Dielectric for High‐Performance Organic Complementary Inverters
نویسندگان
چکیده
منابع مشابه
Stable complementary inverters with organic field-effect transistors on Cytop fluoropolymer gate dielectric
We present results on small-molecule pand n-type organic semiconductors in combination with the highly water repellent fluoropolymer CytopTM as the gate dielectric. Using pentacene and N,N -ditridecylperylene-3,4,9,10-tetracarboxylicdiimide PTCDI-C13 , we fabricated complementary inverters of high electrical quality and stability that are almost unaffected by repeated gate bias stress. The comb...
متن کاملAmbipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer
Thin film electronics fabricated with non-toxic and abundant materials are enabling for emerging bioelectronic technologies. Herein complementary-like inverters comprising transistors using 6,6'-dichloroindigo as the semiconductor and trimethylsilyl-cellulose (TMSC) films on anodized aluminum as bilayer dielectric layer are demonstrated. The inverters operate both in the first and third quadran...
متن کاملn-Channel organic thin film transistors and complementary inverters
n-channel organic thin film transistors (OTFTs) with field-effect mobility comparable to that typically reported for pchannel pentacene TFTs were fabricated on oxidized silicon wafers using N,N'-ditridecylperylene-3,4,9,10tetracarboxylic diimide (PTCDI-C13H27) as the semiconductor. Au, Cr, Al, and LiF/Al source and drain contacts were studied. Accumulation mode n-channel transistor operation wa...
متن کاملInkjet-Printed Silver Gate Electrode and Organic Dielectric Materials for Bottom-Gate Pentacene Thin-Film Transistors
An inkjet-printed silver electrode and a spin-coated cross-linked poly(4-vinylphenol)(PVP) dielectric layer were used as a gate electrode and a gate insulator for a bottom-gate pentacene thinlm transistor (TFT), respectively. The printing and the curing conditions of the printed silver electrode were optimized and tested on various substrates, such as glass, silicon, silicon dioxide, polyethers...
متن کاملMetal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
The dependence of the metal gate work function on the underlying gate dielectric in advanced metal-oxide-semiconductor ~MOS! gate stacks was explored. Metal work functions on high-k dielectrics are observed to differ appreciably from their values on SiO2 or in vacuum. We applied the interface dipole theory to the interface between the gate and the gate dielectric of a MOS transistor and obtaine...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advanced Materials
سال: 2015
ISSN: 0935-9648,1521-4095
DOI: 10.1002/adma.201404627